First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor

Journal of Crystal Growth

Volumn 146, Issue 1-4, 1995, Pages 37-41

  Rupp, R ^a   Lanig, P ^a   Volkl J ^a   Stephani, D ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ROTATING DISKS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON WAFERS; SURFACE PROPERTIES;

SITE COMPETITION EFFECT;

CRYSTAL GROWTH;

EID: 0029232973     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)00466-8     Document Type: Article

References (11)

1. Atomic-Layer Level Control in SiC Crystal Growth Using Gas Source Molecular Beam Epitaxy.