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Applied Physics Letters

Volumn 56, Issue 4, 1990, Pages 373-375

A Si0.7Ge0.3 strained-layer etch stop for the generation of thin layer undoped silicon

(7) Godbey, D a Hughes, H a Kub, F a Twigg, M b Palkuti, L c Leonov, P c Wang, J c

a NAVAL RESEARCH LABORATORY (United States)

b SCIENCE APPLICATIONS INTERNATIONAL CORPORATION (United States)

c Advanced Research & Applications Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003512575 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.102789 Document Type: Article

Times cited : (23)

References (12)

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- Palkuti, L.J.¹ Ling, P.² Leonov, P.³ Kawayoshi, H.⁴ Ormond, R.⁵ Yuan, J.⁶

7
- 84912688806
- (Academic, London)
- (1984) Microcircuit Engineering , pp. 309
- Hersener, J.¹ Herzog, H.-J.² Csepregi, L.³

8
- 0003827024
- E. Rasper and J. C. Bean, Eds, (CRC, Boca Raton, FL).
- (1988) Silicon Molecular Beam Epitaxy

9
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- (1986) Appl. Phys. Lett. , vol.47 , pp. 721
- Gibbons, J.F.¹ Gronet, C.M.² Williams, K.E.³

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- Ishizaka, A.¹ Shiraki, Y.²

11
- 0024170244
- (1988) Tech. Dig. IEDM , vol.88 , pp. 562
- Narozny, P.¹ Hamacher, M.² Dämbkes, H.³ Kibbel, H.⁴ Kasper, E.⁵

12
- 0023042985
- (1986) Appl. Phys. Lett. , vol.48 , pp. 56
- Hull, R.¹ Bean, J.C.² Cerdeira, F.³ Fiory, A.T.⁴ Gibson, J.M.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.