Defect engineering radiation tolerant silicon detectors

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 221-232

  MacEvoy, B C ^a   Watts, S J ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

Defect engineering; Particle detectors; Radiation; Silicon

Indexed keywords

CHARGE TRANSFER; DEFECTS; PARTICLE DETECTORS; RADIATION DAMAGE; SEMICONDUCTING SILICON; COLLIDING BEAM ACCELERATORS; HEAT RADIATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

DEFECT ENGINEERING; HADRONIC IRRADIATION;

SILICON SENSORS; SILICON DETECTORS;

DEFECT CHARACTERISATION; DEFECT ENGINEERING; ELECTRICAL CHARACTERISTIC; IRRADIATED DEVICES; LARGE HADRON COLLIDER; MICROSCOPIC LEVELS; RADIATION TOLERANT; VACANCY-RELATED DEFECTS;

EID: 0031331794     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.221     Document Type: Article

References (23)

1. CMS Collaboration, CERN/LHCC 94-38 (1994).
2. A. Van Ginneken, Fermilab National Accelerator Laboratory FN-522 (1989).
3. S. Sotthibandhu, PhD thesis, Imperial College. Rutherford Appleton Laboratory RALT-025 (1994) and references therein.
4. RD2 Collaboration, Nucl. Phys. B (Proc. Suppl.) 32, 415 (1993).
5. K. Gill et al., Nucl. Instr. and Meth. A 322, 177 (1992).
6. H. Feick, PhD thesis, Hamburg University (1997).
7. G. Davies et al., Semicond. Sci. Technol. 2, 524 (1987).
8. B. C. MacEvoy, submitted to the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 6-8 March 1996. To be published in Nucl. Instr. and Meth. A.
9. B. C. MacEvoy, PhD thesis, Imperial College. Rutherford Appleton Laboratory RAL-TH-97-003 (1997).
10. J. W. Corbett, G. D. Watkins, Phys. Rev. A 138, 555 (1965).
11. J. Matheson, M. Robbins, S. J. Watts, CERN RD20/TN/36 (1994).
12. Y. H. Lee, J. W. Corbett, Phys. Rev. B 13, 2653 (1976).
13. Y. H. Lee, T. D. Bilash, J. W. Corbett, Radiat. Eff. 29, 7 (1976).
14. S. J. Watts, submitted to the 192nd Meeting of the Electrochemical Society, Inc., Paris, 31 August - 5 September 1997.
15. K. Gill et al., accepted for publication in J. Appl. Phys. (1997).
16. S. J. Watts et al., IEEE Trans. Nucl. Sci. NS-43, 2587 (1996).
17. L. Sealy et al., Nucl. Instr. and Meth. B 80/81, 528 (1993).
18. M. Moll et al., contribution to the Second Workshop on Radiation Hardening of Silicon Detectors, CERN (1997).
19. G. Davies et al., J. Phys. C: Solid State Phys. 20, 191 (1987).
20. M. Moll et al., submitted to the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 6-8 March 1996. To be published in Nucl. Instr. and Meth. A.
21. B. Dezillie et al., submitted to the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 6-8 March 1996. To be published in Nucl. Instr. and Meth. A. See also CERN/ECP 96-06 (1996).
22. S. J. Bates et al., CERN/ECP 95-18 (1995).
23. B. G. Svensson et al., J. Appl. Phys. 72, 5616 (1992).