Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2616-2623

  Hiemstra, David M ^a   Kizeevi, Ajexandr A ^b   Hou, Li Z ^c   Andre, C ^a   Salamaspar Space Systems, T ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b Mortel Networks   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; IRRADIATION; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

SELFGATING; SIDEGATING;

MESFET DEVICES;

EID: 0032314431     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736505     Document Type: Article

References (45)

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