Annealing effects on multi-quantum well laser diodes after proton irradiation

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2826-2832

  Zhao, Y F ^a   Schrimpf, R D ^a   Patwary, A R ^b   Neifeld, M A ^b   Al Johani, A W ^b   Weller, R A ^b   Galloway, K F ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; PROTON IRRADIATION; RADIATION EFFECTS;

FORWARD BIAS ANNEALING EFFECTS; MULTIQUANTUM WELL LASER DIODES; OPTICAL POWER;

QUANTUM WELL LASERS;

EID: 0032319591     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736535     Document Type: Article

References (26)

1. A.H. Faxten, R. F. Carson, H. Schone, E. W. Taylor, K. D. Choquette, H. Q. Hou, K. L. Lear, and M. E. Warren, "Damage from proton irradiation of vertical cavity surface-emmitting lasers", IEEE Tran. Nucl. Sei. , Vol. 44, No. 6, pp. 1885-1892, Dec. 1997.
2. Y.F. Zhao, A. R. Patwary, R. D. Schrimpf, M. A. Neifeld, and K. F. Galloway, "200 MeV Proton Damage Effects on Multi-Quantum Well Laser Diodes", IEEE Tran. Nucl. Sei. , Vol. 44, No. 6, pp. 1898-1905, Dec. 1997.
3. B.D. Evans, H. E. Hager and B. W. Hughlock, "5. 5 MeV proton irradiation of a strained quantum well laser diode and a multiple quantum-well broadband LED", IEEE Tran. Nucl. Sei. , Vol. 40, No. 6, pp. 1645-1654, Dec. 1993.
4. O V Zhuravleva, V D Kurnosov, V I Shveikin, "Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers", Quantum Electronics, Vol. 19, No. 9, pp. 753-755, 1997.
5. C.E. Barnes and J. J. Wiczer, "Radiation effects in optoelectronic devices", Sandia National Laboratories Report Number SAND-84-0771, 1984.
6. R.F. Carson and W. W. Chow, "Neutron effects in high power GaAs laser diodes", IEEE Trans. NucL Sei, Vol. 36, No. 6, pp. 2076-2082, 1989.
7. H. Lischka, P. Clemens, H. Henschel, O. Kohn, W. Lennartz and H.U. Schmidt, "Radiation effects in optoelectronic devices", SPIE, pp. 43-52, Vol. 2425, 1994.
8. E.G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics", Proceedings of the IEEE, Vol. 76, pp. 1423-1442, Nov. 1988
9. I. Arimura and C.E. Barnes, "Proton damage in laser diodes and light-emitting diodes (LEDs) ", SPIE, Vol. 328, pp. 83-87, 1982.
10. C.E. Barnes, "Effects of Co60 gamma irradiation on epitaxial GaAs laser diodes", Physics Review B, Vol. 1, No. 12, 15 June 1970.
11. S.M. Khanna, A. Houdayer, A. Jorio, C. Carlone, M. Parenteau, and J. W. Gerdes Jr, "Nuclear radiation displacement damage prediction in gallium arsenide through low temperature photolummescence measurements", IEEE Trans. Nucl. Sei, Vol. 43, No. 6, pp. 2601-2608, 1996.
12. H.T. Minden, "Effects of proton bombardment on the properties of GaAs laser diodes", Journal of Applied Physics, Vol. 47, No. 3, pp. 1090-1094, 1976.
13. Y. Nagai, T. Shiba, Y. Kunitsugu, M. Miyashita, S. Karakida and H. Watanabe, "Large area wafer processing for 0. 78 |im AlGaAs laser diodes", IEEE Photonics Tech. Lett. , Vol. 7, No. 10, pp. 1101-1103, 1995.
14. A. Shima, M. Miyashita, T. Miura, T. Kadowaki, N. Hayafuji, M. Aiga and W. Susaki, "Uniform and high-power characteristics of 780-ntn AlGaAs TQW laser diodes fabricated by large scale MOCVD", IEEE Journal of Quantum Electronics, Vol. 30, No. 1, pp. 24-30, 1994.
15. H.H. Tan, J. S. Williams, and C. Jagadish, "Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs", J. Applied Physics, Vol. 78, No. 3, pp. 1481-1487, 1995.
16. S.A. Goodman, F. D. Auret, and W. E. Meyer, "The effect of alpha-particle and proton irradiation on electrical and defect properties of n-GaAs", Nuclear Instruments and Methods in Physics Research B, Vol. 90, pp. 349-353, 1994.
17. F.H. Eisen, K. Bachern, E. Klausman, K. Koehler, and R. Haddad, "Ion irradiation damage in n-type GaAs in comparison with its electron irradiation damage" J. Applied Physics, Vol. 72, No. 12, pp. 5593-5601,1992.
18. P N Brunbov, V S Kalinovsky, V G Nikitin and M M Sobolev, "Generation of the EL2 defect in n-GaAs irradiated by high energy protons", Semicond. Sei. Technol. Vol. 7, pp. 1237-1240, 1992.
19. Y. Itoh, K.H. Lee, H. Murakami, and R. Iwata, "Defect study of proton-irradiated liquid-encapsulated Czochralski GaAs using the positron annihilation technique", Applied Physics A, Vol. 60, pp. 57-60, 1992.
20. D. Pon and J.C. Bourgoin, "Irradiation-induced defects in GaAs", J. Physics C, Vol. 18, pp. 3839-3871, 1985.
21. L.C. Kimerling, "Recombination enhanced defect reactions", Solid-State Eleectronics, Vol. 21, No. 11-12, pp. 1391-1401, 1978.
22. A.C. Irvine and D. W. Palmer, "Demonstration of gallium-defect annealing at 280K in irradiated GaAs and AlxGa,. xAs", Physics Review B, Vol. 49, No. 8, pp. 56955698,1994.
23. D.V. Lang and L. C. Kimerling, "Observation of recombination-enhanced defect reaction in semiconductor", Physics Review Letter, Vol. 33, No. 8, pp. 489-492, 1974.
24. D.V. Lang, L. C. Kimerling, and S. Y. Leung, "Recombination-enhanced annealing of El and E2 defect levels in 1-MeV-electron-irradiated n-GaAs", J. Applied Physics, Vol. 47, No. 8, pp. 3587-3591, 1976.
25. G. P Agrawal, and N.K. Dutta, "Long-wavelength semiconductor lasers", Van Nostrand Reinhold, New York, 1986.
26. L.J. Mawst, G. Costrini, C. A. Zmudzinnski, M. E. Givens, M. A. Emanuel, and J. J. Coleman, "Complementary selfaligned laser by metalorganic chemical vapor deposition", Electronics Letters, Vol. 21, No. 20, pp. 903-905, 1985.