A solar blind, hybrid ill-nitride/silicon, ultraviolet avalanche photodiode

IEEE Transactions on Electron Devices

Volumn 46, Issue 12, 1999, Pages 2348-2350

  Paul Ruden P ^a,b   Rrishnankutty, Subash ^a  

^a University of Minnesota   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; IMPACT IONIZATION; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; ULTRAVIOLET DETECTORS;

SOLAR BLIND RESPONSE; ULTRAVIOLET AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0033325584     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.808080     Document Type: Article

References (21)

1. S. Strite and H. Morkoc, "GaN, AIN, and InN: A review," J. Vac. Sei. Technol. B, vol. 10, p. 1237, 1992.
2. For an excellent review of Ill-Nitride UV detectors up to 1996, see: M. Razeghi and A. Rogalski, "Semiconductor UV detectors," J. Appl. Phys.. vol. 79, p. 7433, 1996.
3. B. Goldenberg, J. D. Zook, and R. J. Ulmer, "Fabrication and performance of GaN detectors," in Proc. Topical Workshop on III-VNitrides, Nagoya, Japan, 1995.
4. J. M. Van Hove, R. Hickman, J. J. Klaassen, P. P. Chow, and P. P. Rüden, "Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy," Appl. Phys. Lett., vol. 70, p. 2282, 1997.
5. S. Krishnankutty, W. Yang, T. Nohava, and P. P. Rüden, "Fabrication and characterization of GaN/AlGaN UV band heterojunction photodiodes," MRS Internet J. Nitride Semicond. Res., vol. 3, article 7, 1998.
6. I. H. Oguzman, E. Bellotti, K. F. Brennan, J. Kolnik, R. Wang, and P. P. Rüden, "Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN," J. Appl. Phys., vol. 81, p. 7827, 1997.
7. R. J. Mclntyre, "The distribution of gains in uniformly multiplying APD's: Theory," IEEE Trans. Electron Devices, vol. ED-19, p. 703, 1972.
8. J. Kolnik, I. H. Oguzman, K. F. Brennan, R. Wang, and P. P. Rüden, "Theoretical prediction of zincblende GaN avalanche photodiode performance based on numerically calculated electron and hole impact ionization ratio," in Mat. Res. Soc. Symp. Proc., 1996, vol. 423, p. 45.
9. T. Kaneda, "Silicon and germanium APD's," in Semiconductors and Semimetals, W. T. Tsang, Ed. New York: Academic, 1985, p. 247, vol. 22D.
10. A. Sood, private communication.
11. A. R. Hawkins, W. Wu, P. Abraham, K. Streubel, and J. E. Bowers, "High gain-bandwidth product silicon heterointerface photodetector," Appl. Phys. Lett., vol. 70, p. 303, 1997.
12. W. van Roosbroeck and W. Shockley, "Photo-radiative recombination of electrons and holes in germanium," Phys. Rev., vol. 94, p. 1558, 1954.
13. R. Wang, P. P. Rüden, J. Kolnik, I. Oguzman, and K. F. Brennan, "Dielectric properties of wurtzite and zincblende structure GaN," J. Phys. Chem. Solids, vol. 58, p. 913, 1997.
14. R. J. Elliott, "Intensity of optical absorption by excitons," Phys. Rev., vol. 108, p. 1384, 1957.
15. J. D. Albrecht, R. Wang, P. P. Rüden, M. Farahmand, and K. F. Brennan, "Electron transport characteristics of GaN for high temperature device modeling," J. Appl. Phys.. p. 83, 1998.
16. L. Lin, K. H. Gulden, P. Hilbig, P. Kiesel, P. Riel, and G. H. Dohler, "Anomalous drift and diffusion of nonequilibrium charge carriers in n-i-p-i doping superlattices," Surf. Sei., vol. 228, p. 500, 1989.
17. P. P. Rüden and J. A. Lehman, "Nonlinear optical properties of nipi superlattices," Proc. SPIE, vol. 1216, p. 190, 1990.
18. K. H. Gulden, H. Lin, P. Kiesel, P. Riel, G. H. Dohler, and K. J. Ebeling, "Giant ambipolar diffusion constant of NIPI superlattices," Phys. Rev. Lett., vol. 66, p. 373, 1991.
19. S. Nakamura and G. Fasol, The Blue Laser Diode. Berlin, Germany: Springer-Verlag, 1997.
20. P. M. Bridger, Z. Z. Bandic, E. C. Piquette, and T. C. McGill, "Correlation between the surface defect distribution and minority carrier transport properties in GaN," Appl. Phys. Lett., vol. 73, p. 3438, 1998.
21. S. Guha and N. A. Bojarczuk, "UV and violet GaN light emitting diodes on Si," Appl. Phys. Lett., vol. 72, p. 415, 1998.