Inverse modeling and its application to MOSFET channel profile extraction

IEICE Transactions on Electronics

Volumn E82-C, Issue 6, 1999, Pages 862-869

  Hayashi, Hirokazu ^a   Matsuhashi, Hideaki ^a   Fukuda, Koichi ^a   Nishi, Kenji ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Doping profile extraction; Inverse modeling; MOSFET; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; ELECTRIC PROPERTIES; ONE DIMENSIONAL; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

DOPING PROFILE EXTRACTION; INVERSE MODELING; REVERSE SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0033321194     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (19)

1. W. Crans, Software tools for process, device and circuit modeling, cd. W. Crans, Boole Press, p.3, 1989.
2. \V. Mass, K.D. Meyer, and R.V. Overstraeten, Impact ionization in silicon: A review and update, Solid State Electronics, vol.33, no.6, pp.705-718, 1990.
3. P.-S. Lin and C.-H. Chang, A new method to determine the work-function difference and its application to calibrate the boron-segregation coefficient, IEEE Electron Device Lett., vol.12, no.ll, pp.638-640, 1991.
4. V. Scnez, D. Collard, P. Ferreira, and B. Baccus, Simulation of advanced field isolation using calibrated viscoelastic stress analysis, IEDM Tech. Dig., pp.881-884, 1994.
5. S.K. Jones, A. Poncet, I.D. Wolf, M.M. Ahmed, and W.J. Rothwell, An advanced calibration method for modeling oxidation and mechanical stress in sub-micron CMOS isolation structures, IEDM Tech. Dig., pp.877-880, 1994.
6. C. Jungemann, S. Yamaguchi, and H. Goto, Accurate prediction of hot-carrier effects for a deep sub-/im CMOS technology based on inverse modeling and full band Monte Carlo device simulation, SISPAD'95, Tech. Dig., pp.59-60, 1995.
7. A. Das, D. Newmark, I. Clejan, M. Foisy, M. Sharma, S. Venkatcsan, S. Veeraraghavan, V. Misra, B. Gadepally, and L. Parrillo, An advance MOSFET design approach and a calibration methodology using inverse modeling that accurately predicts device characteristics, IEDM Tech. Dig., pp.687-690, 1997.
8. A. Nasr, J. Faricelli, N. Khalil, and C.-L. Huang, Ultra high performance, low power 0.2/im CMOS microprocessor technology and TCAD requirements, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.126-134, 1995.
9. N. Khalil, J. Faricelli, D. Bell, and S. Selberherr, The extraction of two-dimensional MOS transistor doping via inverse modeling, IEEE Electron Device Lett., vol.16, no.l, pp.17-19, 1995.
10. G.J.L. Ouwerling, A problem-specific inverse method for two-dimensional doping profile determination from capacitance-voltage measurements, Solid-State Electronics, vol.34, no.2, pp.197-214, 1991.
11. Z.K. Lee, M.B. Mcllrath, and D.A. Antoniadis, Inverse modeling of MOSFETs using I-V characteristics in the subthreshold region, IEDM Tech. Dig., pp.683-686, 1997.
12. T. Toyabe, H. Matsuo, S. Yamamoto, and H. Masuda, Determination of doping profile in sub-debye-length region, IEDM Tech. Dig., pp.G99-702, 1989.
13. K. Khalil, G. Nanz, R. Rios, and S. Selberherr, A B-spline regression technique to determine one-dimentional MOS doping profiles, Proc. ESSDERC'95, pp.191-194, 1995.
14. C. De Boor, A practical guide to splines, Springer- Verlag, New York, 1978.
15. R. Cartuyvels, R. Booth, S. Kubicek, L. Dupas, and K. Do Meyer, A powerful TCAD system including advanced RSM techniques for various engineering optimization problems, SISDEP'93 Vienna, Austria, pp.29-32, 1993.
16. H. Sato, K. Tsuncno, K. Aoyama, T. Nakamura, H. Kunitomo, and H. Masuda, A new hierarchical RSM for TCAD-based device design in 0.4urn CMOS development, IEICE Trans. Electron., vol.E79-C, no.2, pp.226-233, 199G.
17. K. Nishi, H. Matsuliashi, T. Ochiai, M. Kasai, and T. Nishikawa, Evidence of channel profile modification due to implantation damage studied by a new method, and its implication to reverse short channel effects of nMOSFETs, IEDM Tech. Dig., pp.311-314, 1995.
18. O.S. Rafferty, H.H. Vuong, S.A. Eshraghi, M.D. Giles, M.R. Pinto, and S.J. Hillenius, Explanation of reverse short channel effect by defect gradients, IEDM Tech. Dig., pp.311-314, 1993.
19. H- Jacobs, A.V. Schwerin, D. Scharfetter, and F. Lau, MOSFET reverse short channel effect due to silicon interstitial capture in gate oxide, IEDM Tech. Dig., pp.307310, 1993.