Inverse modeling of MOSFETs using I-V characteristics in the subthreshold region

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 683-686

  Lee, Zachary K ^a   McIlrath, Michael B ^a   Antoniadis, Dimitri A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INVERSE MODELING;

CURRENT VOLTAGE CHARACTERISTICS; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

MOSFET DEVICES;

EID: 84886448096     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)