Accurate prediction of hot-carrier effects for a deep sub-μm CMOS technology based on inverse modeling and full band Monte Carlo device simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 59-60

  Jungemann, C ^a   Yamaguchi, S ^a   Goto, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; FORECASTING; INVERSE PROBLEMS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON WAFERS;

ACCURATE PREDICTION; COMPARISON WITH EXPERIMENTS; DEVICE CHARACTERISTICS; DEVICE PARAMETERS; DEVICE SIMULATIONS; FULL-BAND MONTE CARLO; HOT CARRIER EFFECT; PROCESS SIMULATIONS;

MONTE CARLO METHODS;

EID: 11744302281     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865273     Document Type: Conference Paper

References (6)

1. J. Lorenz (ed.), in 3-Dimensional Process Simulation, Springer- Verlag, Wien, 1995.
2. A. Nasr et al., in Simulation of Semiconductor Devices and Processes 6, Springer-Verlag, Wien, p. 126, 1995.
3. R. Thoma et al., IEEE Trans. Electron Devices ED-38, p. 1343, 1991.
4. Chr. Jungemann et al., in Simulation of Semiconductor Devices and Processes 6, Springer-Verlag, Wien, p. 222, 1995.
5. To be published.
6. I. Izawa et al., IEDM Tech. Dig., p. 941, 1994.