Determination of doping profile in sub-Debye-length region

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 699-702

  Toyabe, T ^a   Matsuo, H ^a   Yamamoto, S ^a   Masuda, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

DOPING PROFILE; SECONDARY ION MASS SPECTROMETRY (SIMS); SHALLOW REGIONS; SUB-DEBYE-LENGTH REGION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0024870510     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)