A New Method to Determine the Work-Function Difference and its Application to Calibrate the Boron-Segregation Coefficient

IEEE Electron Device Letters

Volumn 12, Issue 11, 1991, Pages 638-640

  Lin, Pole Shang ^a   Chang, Chia Haur ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; SEMICONDUCTING SILICON;

THRESHOLD VOLTAGES; WORK FUNCTIONS;

SEMICONDUCTOR DEVICES;

EID: 0026258830     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119223     Document Type: Article

References (9)

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8. P.-S. Lin and C.-H. Wang, “Determination of MOSFET channel profile right up to SiO2/Si interface,” in Proc. Int. Symp. VLSI Technol., Syst., Applications, May 1991, pp. 201–204.
9. B. E. Deal, E. H. Snow, and C. A. Mead, “Barrier energies in metal-silicon dioxide-silicon structures,” J. Phys. Chem. Solids, vol. 18, pp. 169–181, 1975.