Arsenic incorporation in InAsP/InP quantum wells

Journal of Electronic Materials

Volumn 28, Issue 10, 1999, Pages 1108-1110

  Dagnall, G ^a   Brown, A S ^a   Stock, S R ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033320277     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0246-0     Document Type: Article

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