Solid source MBE growth of InAsP/InP quantum wells

Journal of Electronic Materials

Volumn 28, Issue 8, 1999, Pages 933-938

  Dagnall, Georgiana ^a   Shen, Jeng Jung ^a   Kim, Tong Ho ^a   Metzger, Robert A ^a   Brown, April S ^a   Stock, Stuart R ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DIMERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAX; MULTIQUANTUM WELLS; OPTICAL QUALITY; SOLID SOURCE MOLECULAR BEAM EPITAXY; TETRAMER ARSENIC;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033338274     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0199-3     Document Type: Article

References (19)

1. M. Toivonen, P. Savolainen, H. Asonen, and R. Murison, J. Vac. Sci. Technol. B. 14, 1736 (1996).
2. P. Thiagarajan, A.A. Bernussi, H. Temkin, G.Y. Robinson, A.M. Sergent, and R.A. Logan, Appl. Phys. Lett. 67, 3676 (1995).
3. J.F. Carlin, A.V. Syrbu, C.A. Berseth, J. Behrend, A. Rudra, and E. Kapon, Appl Phys. Lett. 71, 13 (1997).
4. M. Beaudoin, A. Bensaada, R. Leonelli, P. Desjardins, R.A. Masut, L. Isnard, A. Chennouf, and G. L'Espérance, Phys. Rev. B 53, 1990 (1996).
5. R.E. Cavicchi, D.V. Lang, D. Gershoni, A.M. Sergent, J.M. Vandenberg, S.N.G. Chu, and M.B. Panish, Appl. Phys. Lett. 54, 739 (1989).
6. E.A. Montie, P.J.A. Thijs, and G.W. 't Hooft, Appl. Phys. Lett. 53, 1611 (1988).
7. J.E. Cunningham, M.D. Williams, R.N. Pathak, W. Jan, J. Cryst. Growth 150, 492 (1995).
8. H.Q. Hou and C.W. Tu, Appl. Phys. Lett. 60, 1872 (1992).
9. J.P.R. David, M. Hopkinson, P.N. Stavrinou, and S.K. Haywood, J. Appl. Phys. 78, 3330 (1995).
10. C.R. Stanley, M.C. Holland, A.H. Kean, M.B. Stanaway, R.T. Grimes, and J.M. Chamberlain, Appl. Phys. Lett. 58, 478 (1991).
11. T. Hayakawa, M. Morishima, M. Nagai, H. Horie, and K. Matsumoto, Appl.Phys. Lett. 59, 2415 (1991),
12. M. Popp, M. Schiefele, M. Hurich, M. Wachter, J.M. Schneider, B. Marheineke, and H. Heinecke, J. Cryst. Growth 150, 528 (1995).
13. C.C. Wamsley, M.W. Koch, and G.W. Wicks, J. Vac. Sci. Technol. B 14, 2322 (1996).
14. th Int. Conf. On InP and Related Mater. Proc. (Paris, France: IEEE, 1994), p.127.
15. J.Y. Kim, D. Bassi, and L. Jostad, Appl. Phys. Lett. 57, 2107 (1990).
16. C.E.C. Wood and F.G. Johnson, J. Appl. Phys. 78, 4444 (1995).
17. C. Qiu, R.V. Kruzelecky, D.A. Thompson, D. Comedi, G. Balcaitis, B.J. Robinson, and R.W. Streater, Can. J. Phys. 70, 886, (1992).
18. R.Y.-F. Yip, A. Aït-Ouali, A. Bensaada, P. Desjardins, M. Beaudoin, L. Isnard, J.L. Brebner, J.F. Currie, and R.A. Masut, J. Appl. Phys. 81, 1905 (1997).
19. M. Hopkinson and J.P.R. David, J. Cryst. Growth 175, 1033 (1997).