Metalorganic molecular beam epitaxy of strain-compensated InAsP/InGaAsP multi-quantum-well lasers

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1233-1237

  Sugiura, Hideo ^a   Ogasawara, Matsuyuki ^a   Mitsuhara, Manabu ^a   Oohashi, Hiromi ^a   Amano, Toshimasa ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

INDIUM ARSENIC PHOSPHIDES; INDIUM GALLIUM ARSENIC PHOSPHIDE; METALLORGANIC MOLECULAR BEAM EPITAXY; SEPARATE CONFINEMENT HETEROSTRUCTURES; STRAIN COMPENSATION;

QUANTUM WELL LASERS;

EID: 0030083973     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361016     Document Type: Article

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