All solid source molecular beam epitaxy growth and characterization of strain-compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high-temperature operation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1736-1738

  Toivonen, M ^a   Savolainen, P ^a   Asonen, H ^a   Murison, R ^b  

^a Tutcore Ltd   (Finland)

^b EG and G Optoelectronics Canada   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544268875     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588549     Document Type: Article

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