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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7100-7103

Reduction of the number of parameters for the simulation of impurity diffusion

(1) Uematsu, Masashi a

a NTT CORPORATION (Japan)

Author keywords

Binding energy; Impurity diffusion; Parameters; Rate constants; Simulation

Indexed keywords

BINDING ENERGY; COMPUTER SIMULATION; CRYSTAL IMPURITIES; DIFFUSION; MATHEMATICAL MODELS; POINT DEFECTS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING BORON; SEMICONDUCTING SILICON; TEMPERATURE;

IMPURITY DIFFUSION; RATE CONSTANTS; REVERSE SHORT CHANNEL EFFECT; THERMAL EQUILIBRIUM;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031357816 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.7100 Document Type: Article

Times cited : (8)

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