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Volumn 273-274, Issue , 1999, Pages 512-515

Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ENTHALPY; ENTROPY; EPITAXIAL GROWTH; POINT DEFECTS; THERMOOXIDATION;

EID: 0033313788     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00541-4     Document Type: Article
Times cited : (8)

References (19)
  • 8
    • 0000963839 scopus 로고    scopus 로고
    • Y. Mishin, G. Vogl, N. Cowern, R. Catlow, D. Farkas (Eds.), Diffusion Mechanisms in Crystalline Materials, Warrendale, PA
    • H. Bracht, E.E. Haller, K. Eberl, M. Cardona, R. Clark-Phelps, in: Y. Mishin, G. Vogl, N. Cowern, R. Catlow, D. Farkas (Eds.), Diffusion Mechanisms in Crystalline Materials, Mater. Res. Soc. Proc. 527, Warrendale, PA, 1998, p. 335.
    • (1998) Mater. Res. Soc. Proc. , vol.527 , pp. 335
    • Bracht, H.1    Haller, E.E.2    Eberl, K.3    Cardona, M.4    Clark-Phelps, R.5
  • 12
    • 0032655301 scopus 로고    scopus 로고
    • H.-J.L. Gossmann, T.E. Haynes, M.E. Law, A.N. Larsen, S. Odanaka (Eds.), Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions, Warrendale, PA
    • A. Ural, P.B. Griffin, J.D. Plummer, in: H.-J.L. Gossmann, T.E. Haynes, M.E. Law, A.N. Larsen, S. Odanaka (Eds.), Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions, Mater. Res. Soc. Symp. Proc. 568, Warrendale, PA, 1999, p.97.
    • (1999) Mater. Res. Soc. Symp. Proc. , vol.568 , pp. 97
    • Ural, A.1    Griffin, P.B.2    Plummer, J.D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.