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physica status solidi (a)

Volumn 117, Issue 1, 1990, Pages 85-90

Transmutation Doping of Indium Phosphide and Gallium Arsenide Due to Protons and α‐Particles

(3) Zakharenkov, L F a Kozlovskii, V V a Shustrov, B A a

a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

PROTONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE--DOPING;

TRANSMUTATION DOPING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0025213663 PISSN: 00318965 EISSN: 1521396X Source Type: Journal
DOI: 10.1002/pssa.2211170107 Document Type: Article

Times cited : (26)

References (12)

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2
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- J. Meeze, Plenum Press, New York/London
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3
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4
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- L. S. Smirnov, Izd. Nauka, Novosibirsk
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5
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6
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- (1986) Fiz. Tekh. Poluprov. , vol.20 , pp. 960
- Gydar, G.P.¹ Dmitrenko, N.N.² Dubar, L.V.³ Kurilo, P.M.⁴ Pavlenko, A.A.⁵ Strueok, J.S.⁶ Tokharevskii, V.V.⁷

7
- 0003798925
- Wiley, London
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8
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9
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10
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11
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- (1985) Review in Electronic Techniques, Ser. , vol.7 , pp. 1109
- Kozlovskii, V.V.¹ Lomasov, V.N.²

12
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- (1985) Zh. tekh. Fiz. , vol.55 , pp. 2175
- Kozlovskii, V.V.¹ Lomasov, V.N.²

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