An improved displacement damage monitor

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1726-1731

  Barry, A L ^a   Maxseiner, R ^a   Wojcik, R ^a   Briere, M A ^b   Braunig D ^b  

^a Industry Canada   (Canada)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; MATHEMATICAL TECHNIQUES--FREQUENCY DOMAIN ANALYSIS; SEMICONDUCTING GALLIUM ARSENIDE--CHARGE CARRIERS;

CARRIER LIFETIME; DISPLACEMENT DAMAGE;

SEMICONDUCTOR DIODES, LIGHT EMITTING;

EID: 0025660893     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101183     Document Type: Article

References (12)

1. A.L. Barry, R. Wojcik, and A.L. MacDiarmid, “Response of GaAs Displacement Damage Monitors to Protons, Electrons, and Gamma Radiation,” IEEE Trans. Nucl. Sci., Vol. NS-36, No. 6, pp. 2400–2404 (1989).
2. W. Harth, W. Huber, and J. Heinen, “Frequency Response of GaAlAs Light-Emitting Diodes”, IEEE Trans. Electron Devices, Vol. ED-23, No. 4, pp. 478–480 (1976).
3. T.P. Lee, “Effect of Junction Capacitance on the Rise Time of LEDs and the Turn-on Delay of Injection Lasers”, Bell Syst. Tech. J., Vol. 54, No. 1, pp. 53–68 (1975).
4. D. Pons and J.C. Bourgoin, “Irradiation-induced Defects in GaAs”, J. Phys. C: Solid State Phys., Vol. 18, No. 20, p3839 (1985).
5. D. Pons, P.M. Mooney, and J.C. Bourgoin, “Energy Dependence of Deep Level Introduction in Electron Irradiated GaAs”, J. Appl. Phys., Vol. 51, No. 4, pp. 2038–2042 (1980).
6. A.H. Kalma, R.A. Berger, C.J. Fischer, and B.A. Green, “Energy and Temperature Dependence of Electron Irradiation Damage in GaAs”, IEEE Trans. Nucl. Sci., Vol. NS-22, No. 6, pp. 2277–2282 (1975).
7. A. Meulenberg, C.M. Dozier, W.T. Anderson, S.D. Mittleman, M.H. Zuglich; and C.E. Caefer, “Dosimetry and Total Dose Radiation Testing of GaAs Devices”, IEEE Trans. Nucl. Sci., Vol. NS-34, No. 6, pp. 1745–1750 (1987).
8. N.E. Byer, “Electroluminescence in Amphoteric Silicon-Doped Doped GaAs Diodes”, J. Appl. Phys., Vol. 41, No. 4, pp. 1597–1601 (1970).
9. F. Seitz and J.S. Koehler, in Solid State Physics, Vol. 2, edited by F. Seitz and D. Turnbull (Acedemic Press, New York, 1956), pp. 305–448.
10. J.A. Grimshaw and P.C. Banbury, “The Displacement Energy in GaAs”, Proc. Phys. Soc., Vol. 84, pp. 151–162 (1964).
11. J.W. Corbett, J.M. Denney, M.D. Fiske, and R.M. Walker, “Electron Irradiation of Copper Near 10°K”, Phys. Rev., Vol. 108, No. 4, pp. 954–964 (1957).
12. G.P. Summers, E.A. Burke, M.A. Xapsos, C.J. Dale, P.W. Marshall, and E.L. Petersen, “Displacement Damage in GaAs Structures”, IEEE Trans. Nucl. Sci., Vol. 35, No. 6, pp. 1221–1226 (1986).