Nuclear radiation displacement damage prediction in gallium arsenide through low temperature photoluminescence measurements

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2601-2608

  Khanna, S M ^a   Houdayer, A ^a   Jorio, A ^b   Carlone, C ^c   Parenteau, M ^c   Gerdes Jr , J W ^d  

^a DEFENCE RESEARCH AND DEVELOPMENT CANADA   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c UNIVERSITÉ DE SHERBROOKE   (Canada)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; GAMMA RAYS; ION BOMBARDMENT; NEUTRON IRRADIATION; PHOTOLUMINESCENCE; PROTONS; RADIATION DAMAGE;

ELECTRON IRRADIATION; GAMMA IRRADIATION; NONIONIZING ENERGY LOSS (NIEL); NUCLEAR RADIATION DISPLACEMENT DAMAGE; PROTON IRRADIATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030368616     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556842     Document Type: Article

References (19)

1. A. L. Barry, R. Wojcik, and A. L. MacDiarmid, "Response of GaAs displacement damage monitors to protons, electrons, and gamma radiation", IEEE Trans. Nucl. Soi. NS-36, No. 6, 24002404(1989).
2. B. Ziebro, J. W. Hemsky, and D. C. Look, "Defect models in electron irradiated n-type GaAs", J. Appl. Phys. 72, 78-81 (1992).
3. G. P. Summers, E. A. Burke, M. A. Xapsos, C. J. Dale, P. W. Marshall, and E. L. Petersen, "Displacement damage in GaAs structures", IEEE Trans. Nucl. Sei. NS-35, No. 6, 1221-1226 (1988).
4. G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron and proton irradiations", IEEE Trans. Nucl. Sei. NS-40, No. 6, 1372-1379 (1993).
5. M. A. Xapsos, G. P. Summers, C. C. Blatchley, C. W. Colerico, E. A. Burke, S. R. Messenger and P. Shapiro, "Co60 gamma ray and electron displacement damage studies of semiconductors", IEEE Trans. Nucl. Sei. NS-41, No. 6, 19451949(1994)
6. A. Jorio, A. Wang, M. Parenteau, C. Carlpne, N. L. Rowell, and S. M. Khanna, "Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide", Phys. Rev. B50, 1557-1566(1994).
7. A. Jorio, M. Parenteau, M. Aubin, C. Carlone, S. M. Khanna, and J. W. Gerdes Jr. , "A mobility study of the radiation induced order effect in gallium arsenide", IEEE Trans. Nucl. Sei. NS-41, No. 6, 1937-1944 (1994).
8. M. Lannoo and J. Bourgoin, "Point Defects in Semiconductors II", Springer Verlag, Berlin (1983).
9. S. M. Khanna, A. Jorio, C. Carlone, M. Parenteau, A. Houdayer, and J. W. Gerdes Jr. , "Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide", IEEE Trans. Nucl. Sei. NS-42, No. 6, 2095-2103 (1995).
10. S. T. Lai, D. Alexiev, and B. D. Nener, "Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiation", J. Appl. Phys. 78, 36863690(1995)
11. A. L. Barry, R. Maxseiner, R. Wojcik, M. A. Briere, and D. Braunig, "An improved displacement damage monitor", IEEE Trans. Nucl. Sei. NS-37, No. 6, 1726-1731 (1990).
12. A. Jorio, C. Rejeb, M. Parenteau, C. Carlone, and S. M. Khanna, "Radiation induced carrier enhancement and intrinsic defect transformation in n-GaAs", J. Appl. Phys. 74, 23102317, (1993).
13. S. M. Khanna, C. Rejeb, A. Jorio, M. Parenteau, C. Carlone, J. W. Gerdes Jr. , "Electron and neutron radiation induced order effect in gallium arsenide", IEEE Trans. Nucl. Sei. NS-40, No. 6, 1350-1359(1993).
14. O. Yu. Borkovskaya, N. L. Dmtruk, V. G, Litovchenko, and O. N. Mishchuk, "Model of the radiation-stimulated ordering effect in III-V semiconductors", Sov. Phys. Semicond. 23, 129132,(1989).
15. unpublished work
16. R. H. Bube, "Electronic properties of crystalline solids", Academic Press, San Diego, 1974.
17. T. Sauncy, C. P. Palsule, M. Holtz, S. Gangopadhyay, and S. Massie, "Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs", Phys. Rev. 653,1900-1906 (1996).
18. A. Jorio, C. Carlone, M. Parenteau, C. Aktik, and N. L. Rowell, "Formation of EL2, AsGa, and U band in irradiated GaAs: Effects of annealing", J. Appl. Phys. 80, 1364-1369 (1996).
19. G. M. Martin and S. Makram-Ebeid, "Les défauts ponctuels dans l'arséniure de gallium", Acta Electronica 25, 133-145 (1983).