Design for Suppression of Gate-Induced Drain Leakage in LDD MOSFET’s Using a Quasi-Two-Dimensional Analytical Model

IEEE Transactions on Electron Devices

Volumn 39, Issue 7, 1992, Pages 1694-1703

  Parke, Stephen A ^a   Wann, Hsingjen C ^a   Ko, Ping K ^a   Hu, Chenming ^a   Moon, James E ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--DOPING;

GATE-INDUCED DRAIN LEAKAGE (GIDL); SILICON DEVICES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026896291     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.141236     Document Type: Article

References (18)

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