Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devices

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 67, Issue 1, 1999, Pages 88-94

  Ashokan, R ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; MERCURY COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

PHOTOVOLTAIC DEVICES;

MOLECULAR BEAM EPITAXY;

EID: 0033285415     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00214-7     Document Type: Article

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