Prerequisite for photoluminescence D line spectra of heat-treated carbon-lean Czochralski silicon crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 1-5

  Cho, Ki Hyun ^a   Lee, Jeong Yong ^b   Suh, Eun Kyung ^c   Kim, Ki Wan ^d  

^a LG Siltron Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Chonbuk National University   (South Korea)

^d Kyungpook National University   (South Korea)

Author keywords

60 type dislocation; Cu contamination; Czochralski silicon crystal; Photoluminescence D lines; Planar type defect; Simulated MOS thermal cycles; Stacking fault

Indexed keywords

CARBON LEAN CZOCHRALSKI SILICON CRYSTALS; COPPER CONTAMINATION; PHOTOLUMINESCENCE D LINE SPECTRA; PHOTON ENERGIES;

COPPER; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; EMISSION SPECTROSCOPY; HEAT TREATMENT; MOS DEVICES; PHOTOLUMINESCENCE; PHOTONS; STACKING FAULTS; THERMAL CYCLING;

SILICON WAFERS;

EID: 0030679202     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.1     Document Type: Article

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