Effect of stress induced defects on electrical properties of czochralski grown silicon

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 393-398

  Misiuk, A ^a   Jung, W ^a   Surma, B ^a   Jun, J ^b   Rozental, M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Annealing; Cz Si; Hydrostatic Pressure; Oxygen; Thermal Donors

Indexed keywords

ANNEALING; HYDROSTATIC PRESSURE; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; CRYSTAL GROWTH FROM MELT; ELECTRIC PROPERTIES; PRESSURE EFFECTS; SEMICONDUCTING SILICON; STRESSES;

ARGON PRESSURE; EFFECT OF ANNEALING; EFFECT OF STRESS; ELECTRICAL ACTIVITIES; INTERSTITIAL OXYGEN CONCENTRATION; OXYGEN CONCENTRATIONS; OXYGEN-RELATED DEFECTS; THERMAL DONOR;

SILICON COMPOUNDS; CRYSTAL DEFECTS;

PRESSURE STIMULATED PHENOMENA; THERMAL DONORS;

EID: 16944361841     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.393     Document Type: Article

References (16)

1. A. Misiuk, Solid State Phenomena 19&20 (1991), p. 387.
2. A. Misiuk, J. Adamczewska, J. Bak-Misiuk, J. Wolf, ibid 32&33 (1993), p. 167.
3. A. Misiuk, B. Surma, J. Hartwig, Mater. Sci. Eng. B36 (1996), p. 30.
4. A. Misiuk, L. I. Datsenko, B. Surma and V. P. Popov, Proceed. ESSDERC'94, ed. C. Hill, P. Ashburn, Editions Frontiers 1994, p. 243.
5. I. V. Antonova, A. Misiuk, V. P. Popov, L. I. Fedina, S. S. Shaimeev, Physica B 225 (1996), p. 251.
6. A. Misiuk, P. Zaumseil, Proceed. Altech 95, ed. by B. O. Kolbesen, The Electrochemical Society Proceed. 95-30 (1995), p. 194.
7. A. Misiuk, W. Jung, M. Wroblewski, Electron Technology 29 (1996), p. 210.
8. A. Misiuk, W. Jung, Phys. stat. sol. (b) 198 (1996), p. 565.
9. G. P. Karwasz, A. Misiuk, M. Ceschini, L. Pavesi, Appl. Phys. Lett. 69 (1996), p. 2900.
10. P. Wagner, J. Hage, Appl. Phys. A 49 (1989), p. 123.
11. V. V. Emtsev, B. A. Andreev, A. Misiuk, K. Schmalz, in Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (NATO ASI Series 3. High Technology - vol. 17, Kluwer Academic Publ. , Dordrecht (1996), p. 345.
12. C. A. Londos, M. J. Binns, A. R. Brown, S. A. McQuaid, R. C. Newman, Appl. Phys. Lett. 62 (1993) 1525.
13. A. Misiuk, submitted to Proceed. XII Conf. Solid State Crystals, Zakopane, Poland, 1996.
14. H. Ono, T. Ikarashi, S. Kimura, A. Tanikawa, J. Appl. Phys. 78 (1995), p. 4395.
15. A. Borghesi, B. Pivac, A. Sassella and A. Stella, J. Appl. Phys. 77 (1995), p. 4169.
16. M. J. Binns, C. A. Londos, S. A. McQuaid, R. C. Newman, N. G. Semaltianos, J. H. Tucker, J. Mater. Sci.: Mater, in Electronics 7 (1996), p. 347.