Uniform stress effect on initial stages of oxygen precipitation in Czochralski grown silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3178, Issue , 1997, Pages 230-237

  Misiuk, Andrzej ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Cz Si; Hydrostatic pressure; Nucleation; Oxygen clusters; Precipitation; Stress; Thermal donor

Indexed keywords

ARGON; CRYSTALLOGRAPHY; CRYSTALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROWTH (MATERIALS); HYDROSTATIC PRESSURE; INERT GASES; NONMETALS; NUCLEATION; OXYGEN; SILICON; STRESS ANALYSIS;

ARGON PRESSURES; CZ-SI; CZOCHRALSKI; ELECTRICAL METHODS; INITIAL STAGES; NUCLEATION CENTERS; OXYGEN CLUSTERS; OXYGEN DIFFUSIONS; OXYGEN PRECIPITATIONS; PRECIPITATION; SELECTIVE ETCHINGS; SI MATRIXES; THERMAL DONOR; UNIFORM STRESSES;

PRECIPITATION (CHEMICAL);

EID: 0009322774     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.280740     Document Type: Conference Paper

References (17)

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