Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing

Applied Physics Letters

Volumn 73, Issue 10, 1998, Pages 1418-1420

  Tyschenko, I E ^a   Rebohle, L ^a   Yankov, R A ^a   Skorupa, W ^a   Misiuk, A ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Research Group of Integrated Circuits and System Design   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000495550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121962     Document Type: Article

References (10)

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