Exciton dynamics of thick GaN epilayers deposited by MOVPE on Al2O3

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1279-1282

  Allegre J ^a   Lefebvre, P ^a   Camassel, J ^a   Beaumont, B ^b   Gibart, P ^b  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CRHEA CNRS   (France)

Author keywords

Thickness Dependence; Time Resolved Photoluminescence

Indexed keywords

ALUMINA; EXCITONS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 11644324135     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (16)

1. S. Nakamura, MRS Bulletin 22 (1997) p.29.
2. C. Harris, B. Monemar, H. Amano and I. Akasaki, Appl. Phys. Lett. 67 (1995) p.840.
3. G. Chen, M. Smith, J. Lin, H.X. Jiang, M. Asif Khan and C. Sun, Appl. Phys. Lett. 67 (1995) p.1653.
4. W. Shan, T. Schmidt, X.H. Yang, J.J. Song, B. Goldenberg, J. Appl. Phys., 79 (1996) p.3691.
5. A. Hangleiter, J.S. Im, T. Fortner, V. Härle and F. Scholz, Mat. Res. Soc. Symp. Proc. 395 (1996) p.559.
6. K. Okada, Y. Yamada, T. Tagushi, F. Sasaki, S. Kobayashi, T. Tani, S. Nakamura, G. Shinomiya, Jpn. J. Appl. Phys. 35 (1996) p., L787.
7. Y. Kawakami, Z. Peng, Y. Narukawa, S. Fujita, S. Fujita and S. Nakamura, Appl. Phys. Lett. 69, 1414 (1996)
8. B.K. Meyer, D. Volm, C. Wetzel, L. Eckey, J.C. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, E.N. Mokhov, P.G. Baranov, C. Qiu , Mat. Res. Soc. Symp. Proc. 378, 521 (1995).
9. M. Smith, G.D. Chen, J.Y. Lin, H.X. Jiang, A. Salvador, B.N. Sverdlov, A. Botchkarev and H. Morkoç, Appl. Phys. Lett. 66, 3474 (1995)
10. G.D. Chen, M. Smith, J.Y. Lin, H.X. Jiang, A. Salvador, B.N. Sverdlov, A. Botchkarv, H. Morkoç, J. Appl. Phys. 79, 2675 (1996)
11. M. Smith, G.D. Chen, J. Z. Li, J.Y. Lin, H.X. Jiang, A. Salvador, W.K. Kim, O. Aktas, A. Botchkarev and H. Morkoç, Appl. Phys. Lett. 67, 3387 (1995)
12. J.J. Song, W. Shan, T. Schmidt, X.H. Yang, A. Fisher, S.W. Hwang, B. Taheri, B. Goldenberg, R. Horning, A. Salvador, W. Kim, Ö. Atkas, A. Botchkarev and H. Morkoç, in "Physics and Simulation of Optoelectronic Devices IV", SPIE Proceedings Series, 2693, 86-96 (1996)
13. L. Falkowsky, J.M. Bluet, J. Camassel, Phys. Rev. B 55, R14697 (1997); also see : J.M. Bluet, L. Falkowsky, N. Planes and J. Camassel (this conference)
14. L. Falkowsky, J.M. Bluet, J. Camassel, Phys. Rev. B 55, R14697 (1997); also see : J.M. Bluet, L. Falkowsky, N. Planes and J. Camassel (this conference)
15. B. Beaumont, M. Vaille, T. Boufaden, B. El Jani, P. Gibart, J. Cryst. Growth 170, 316 (1997)
16. J.P. Bergman, B. Monemar, H. Amano, I. Akasaki, K. Hiramatsu, N. Sawaki and Detchprohm, Inst. Phys. Conf. Ser. 142, 931 (1997)