Growth mechanism in the metalorganic vapor phase epitaxy of metastable GaP1-xNx alloys: A growth interruption study

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7110-7118

  Miyoshi, Seiro ^a,c   Yaguchi, Hiroyuki ^a   Onabe, Kentaro ^a   Shiraki, Yasuhiro ^b   Ito, Ryoichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

GaP1 xNx; Growth interruption; Growth mechanism; MOVPE; Nitrogen adsorption and desorption

Indexed keywords

ADSORPTION; DESORPTION; GALLIUM ALLOYS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION;

GROWTH INTERRUPTION TECHNIQUE; MONOLAYER GROWTH;

FILM GROWTH;

EID: 0031376350     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7110     Document Type: Article

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