A Small Signal dc-to-High-Frequency Nonquasistatic Model for the Four-Terminal MOSFET Valid in All Regions of Operation

IEEE Transactions on Electron Devices

Volumn 32, Issue 11, 1985, Pages 2383-2391

  Bagheri, Mehran ^a   Tsividis, Yannis ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - MATHEMATICAL MODELS;

4-TERMINAL MOSFET; SMALL SIGNAL MODEL;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022152815     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22284     Document Type: Article

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