A compact-charge ldd-mosfet model

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1483-1490

  Klein, Peter ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR DEVICE MODELS;

SOFTWARE PACKAGE SABER;

MOSFET DEVICES;

EID: 0031233949     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622605     Document Type: Article

References (12)

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2. R.M. D. A. Velghe, D. B. M. Klaasen, and F. M. Klaasen, "Compact MOS modeling for analog circuit simulation," in IEDM Tech. Dig., 1993, pp. 485-488.
3. B. Lemaitre, "An improved analytical LDD-MOSFET model for digital and analog circuit simulation for all channel length down to deep-submicron," in IEDM'91 Tech. Dig., Washington, DC, 1991.
4. P. Klein, K. Hoffmann, and B. Lemaitre, "A short channel LDD-MOSFET model for analog and digital circuits with low overdrive voltage," in Custom Integrated Circuits Conference, 1995, pp. 229-232.
5. T. Smedes and F.M. Klaassen, "Effects of the lightly doped drain configuration on capacitance characteristics of submicron MOSFET's," in IEDM Tech. Dig., 1990, pp. 197-200.
6. P. Klein, K. Hoffmann, and B. Lemaitre, "Description of the bias dependent + overlap capacitance at LDD MOSFET's for circuit applications," in IEDM Tech. Dig., 1993, pp. 493-496.
7. Y. Tsivides, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987.
8. S. Lui and L.W. Nagel, "Small-signal MOSFET models for analog circuit design," IEEE J. Solid-State Circuits, pp. 983-998, Dec. 1982.
9. C.C. Lo, G. P. Li, and J. H. Mulligan Jr., "An approximation to the factor K in the Toh-Ko-Meyer MOS engineering model," IEEE J. Solid-State Circuits, vol. 29, Jan. 1994.
10. B. Lemaitre and K. Kelting, "JESSI 0.8 μm CMOS transistor model for analogue and digital circuit simulation," Appendix B Final Rep. "JESSI AC 41 Project 'Technology assessment,' " Siemens AG, Semiconductors, July 1995.
11. P. Klein and K. Hoffmann, "Influence of submicron LDD-MOSFET charge effects on low power circuits," in Int. Symp. VLSI Technology, Systems, and Applications., 1995, pp. 281-284.
12. C.S. Oh et al., "Voltage dependence of the MOSFET gate-to-source/drain overlap," Solid-State Electron., vol. 33, pp. 1650-1652, no. 12, 1990.