GaN three dimensional nanostructures

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 295-300

  Dmitriev, V ^a   Irvine, K ^a   Zubrilov, A ^a   Tsvetkov, D ^a   Nikolaev, V ^a   Jakobson, M ^a   Nelson, D ^a   Sitnikova, A ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE; SINGLE CRYSTALS; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY;

BLUE SHIFT; DOT DENSITY; EDGE PEAK POSITION; EXCITATION LEVELS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726342     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)