Effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 307-310

  Yang, H ^a   Niimi, H ^a   Wu, Y ^a   Lucovsky, G ^a   Keister, J W ^a   Rowe, J E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TUNNELING; OSCILLATIONS; PHASE INTERFACES; PHASE TRANSITIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SUBSTRATES;

FOWLER-NORDHEIM TUNNELING REGIMES; INTERFACIAL SUBOXIDE TRANSITIONS; STACKED OXIDE-NITRIDE GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0033190194     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00395-0     Document Type: Article

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