Low temperature mbe grown AlInAs: Investigation of current voltage and low frequency noise behaviour of schottky diodes

Solid-State Electronics

Volumn 41, Issue 6, 1997, Pages 857-864

  Meva'a, C ^a   Letartre, X ^a   Rojo Romeo, P ^a   Viktorovitch, P ^a  

^a ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SHOT NOISE; SUBSTRATES; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

DEEP ELECTRON TRAPS; LOW FREQUENCY NOISE (LFN) MEASUREMENTS;

SCHOTTKY BARRIER DIODES;

EID: 0031163942     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00035-X     Document Type: Article

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