Low-frequency noise behavior of InP-based HEMTs and its connection with phase noise of microwave oscillators

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 943-946

  Plana, R ^a   Llopis, O ^a   Verdier, J ^a   Escotte, L ^a   Parra, T ^a   Gayral, M ^a   Cappy, A ^a   Graffeuil, J ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GATES (TRANSISTOR); MICROWAVE OSCILLATORS; PASSIVATION; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

LORENTZIAN NOISE; LOW FREQUENCY NOISE PROPERTIES; PHASE NOISE; SILICON NITRIDE PASSIVATION LAYER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0029695468     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)