0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1645-1654

  Rohdin, Hans ^a,b   Wakita, Arlene ^a   Nagy, Avelina ^a   Robbins, Virginia ^a   Moll, Nick ^a   Su, Chung Yi ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GATES (TRANSISTOR); IMPACT IONIZATION; INTEGRATED CIRCUIT MANUFACTURE; LATTICE CONSTANTS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

SELECTIVE ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033173967     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00114-8     Document Type: Article

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