Alloying effects on the critical layer thickness in InxGa1-xAs/InP heterostructures analyzed by Raman scattering

Applied Physics Letters

Volumn 72, Issue 4, 1998, Pages 436-438

  Pizani, P S ^a   Boschi, T M ^a   Lanciotti Jr , F ^a   Groenen, J ^b   Carles, R ^b   Maigne P ^c   Gendry, M ^d  

^a FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c Radio Science Branch   (Canada)

^d ECOLE CENTRALE DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041451393     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120800     Document Type: Article

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