Si 3N 4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 2, 1998, Pages 507-510

  Diatezua, D M ^a,b   Wang, Z ^a   Park, D ^a   Chen, Z ^a   Rockett, A ^a   Morkoc, H ^a,c  

^a United States of America   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342441688     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (26)

1. W. M. Lau, R. N. S. Sodhi, B. J. Flinn, K. H. Tan, and G. M. Bancroft, Appl. Phys. Lett. 51, 177 (1987).
2. R. N. S. Sodhi, W. M. Lau, and S. Ingrey, Surf. Interface Anal. 12, 321 (1988).
3. W. C. Dautremont-Smith and C. Feldman, J. Vac. Sci. Technol. A 3, 873 (1985).
4. P. C. Fazan, E. Stocker, M. Dutoit, N. Xanthopoulos, A. Vogel, and H. J. Mathieu, J. Vac. Sci. Technol. B 6, 1092 (1988).
5. R. P. H. Chang, S. Darack, E. Lane, C. C. Chang, D. Allara, and F. Ong, J. Vac. Sci. Technol. B 1, 935 (1983).
6. A. C. Adams, in Plasma Deposited Thin Film, edited by J. Mort and F. Jansen (CRC, Boca Raton, FL, 1986), Chap. 5.
7. T. Hirao, T. Kamada, M. Kitagawa, K. Setune, K. Wasa, A. Matsuda, and K. Tanaka, Jpn. J. Appl. Phys., Part 1 27, 528 (1988).
8. J. Y.-M. Lee, S. Sooriakamon, and M. M. Dange, Thin Solid Films 203, 275 (1991).
9. C. Blaauw, J. Electrochem. Soc. 131, 1114 (1994).
10. W. M. Lau, D. Hui, L. Youn, and R. A. Bruce, in Proceeding of the 11th International Congress on X-ray Optics and Microanalysis, edited by J. D. Brown and R. J. Packwood, Ontario, Canada, 1987 (unpublished).
11. N. Itoh, K. Kato, and I. Kato, Electron. Commun. Jpn., Part 2: Electron. 74 (1991).
12. A. Callegari, D. K. Sadana, D. A. Buchanan, A. Paccagnella, E. D. Marshal, M. A. Tischler, and M. Norcott, Appl. Phys. Lett. 58, 2540 (1991).
13. L. J. Huang, W. M. Lau, S. Ingrey, D. Landheer, and J.-P. Noel, J. Appl. Phys. 72, 8192 (1994).
14. A. A. Saranin, O. L. Tarasova, V. Kotlyar, E. A. Khramtsova, and V. G. Lifshirts, Tech. Phys. Lett. 21, 136 (1995).
15. C. Maillot, H. Roulet, and G. Dufour, J. Vac. Sci. Technol. B 2, 316 (1984).
16. G. Rangelov, J. Stober, B. Eisenhut, and Th. Fauster, Phys. Rev. B 44, 1954 (1991).
17. L. Kubler, E. K. Hill, D. Bolmont, and G. Gewinner, Surf. Sci. 137, 473 (1984).
18. C. H. F. Peden, J. W. Roers, Jr., N. D. Shinn, K. B. Kidd, and K. L. Tsany, Phys. Rev. B 47, 15622 (1993).
19. T. Studt Research & Development Magazine, May, 1990, p. 88.
20. Z. Wang, M. E. Lin, D. Biswas, B. Mazhari, N. Teraguchi, Z. Fan, X. Gui, and H. Morkoc, Appl. Phys. Lett. 62, 2977 (1993).
21. D. S. L. Mui, S. F. Fan, and H. Morkoc, Appl. Phys. Lett. 58, 70 (1991).
22. J. L. Bischoff, F. Lutz, L. Kubler, and D. Bolmont, Thin Solid Films 187, 101 (1990).
23. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
24. D.-G. Park, D. M. Diatezua, Z. Chen, S. Noor Mohammad, and H. Morkoc, Appl. Phys. Lett. 69, 3025 (1996).
25. D. S. L. Mui, H. Liaw, A. L. Demirel, S. Strite, and H. Morkoc, Appl. Phys. Lett. 59, 2847 (1991).
26. T. Zheng, J. M. Gibson, D. S. L. Mui, and H. Morkoc, J. Mater. Res. 10, 1126 (1995).