Degradation of AlGaAs/GaAs power HFET's under on-state and off-state breakdown conditions

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 1055-1060

  Dieci, D ^a   Sozzi, G ^b   Menozzi, R ^b   Lanzieri, C ^c   Cetronio, A ^c   Canali, C ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c ALENIA SPAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GATES (TRANSISTOR); HETEROJUNCTIONS; HOT CARRIERS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

DEGRADATION MODES; ELECTRON HEATING; GATE REVERSE CURRENT; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; OFF STATE BREAKDOWN CONDITIONS; ON STATE BREAKDOWN CONDITIONS;

FIELD EFFECT TRANSISTORS;

EID: 0033143205     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00146-8     Document Type: Article

References (8)

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8. R. E. Leoni and J. C. M. Hwang, "Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs," IEEE Proc. GaAs IC Symp., pp. 31-33, 1996.