Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2638-2639

  Sekiguchi, Shigeaki ^a   Miyamoto, Tomoyuki ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Aluminum arsenide; Carbon doping; p DBR; Tertiarybutylarsine; Trimethylaluminum; VCSEL

Indexed keywords

ALUMINUM ARSENIDE; TERTIARYBUTYLARSINE (TBA); TRIMETHYLALUMINUM (TMAL);

CARBON; CARRIER CONCENTRATION; COMPOSITION EFFECTS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031143164     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2638     Document Type: Article

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