A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate

IEEE Photonics Technology Letters

Volumn 10, Issue 5, 1998, Pages 633-635

  Mizutani, Akimasa ^a   Hatori, Nobuaki ^a   Nishiyama, Nobuhiko ^a   Koyama, Fumio ^a,b   Iga, Kenichi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b IEEE

Author keywords

GaAs (311)B substrate; Polarization control; Semiconductor lasers; Surface emitting lasers

Indexed keywords

ELECTRIC RESISTANCE; LIGHT POLARIZATION; MIRRORS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032075579     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.669216     Document Type: Article

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