Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrates with dynamically stable polarisation

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 276-278

  Takahashi, M ^a   Vaccaro, P ^a   Egami, N ^a   Mizutani, A ^b   Matsutani, A ^b   Koyama, F ^b   Iga, K ^b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTALLOGRAPHY; LIGHT MODULATION; LIGHT POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032484817     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980193     Document Type: Article

References (9)

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