Power penalty in 1.3-μm InP-based strained-layer multiple-quantum-well lasers at elevated temperatures

IEEE Photonics Technology Letters

Volumn 9, Issue 9, 1997, Pages 1205-1207

  Seki, Shunji ^a,b   Yokoyama, Kiyoyuki ^a,b  

^a IEEE   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Indium materials devices; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers

Indexed keywords

HIGH TEMPERATURE EFFECTS; NUMERICAL METHODS; OPTICAL CORRELATION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

POWER PENALTY;

QUANTUM WELL LASERS;

EID: 0031234210     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.618478     Document Type: Article

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