Well number, length, and temperature dependence of efficiency and loss in InGaAsP-InP compressively strained MQW ridge waveguide lasers at 1.3 μm

IEEE Journal of Quantum Electronics

Volumn 33, Issue 8, 1997, Pages 1360-1368

  Prosyk, Kelvin ^b   Simmons, John G ^a,b   Evans, J D ^c  

^a IEEE

^b MCMASTER UNIVERSITY   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

Quantum well lasers; Semiconductor lasers

Indexed keywords

HETEROJUNCTIONS; LEAKAGE CURRENTS; LIGHT ABSORPTION; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

INTERVALENCE BAND ABSORPTION; LOW PRESSURE METALORGANIC VAPOR PHASE EPITAXY; STEPPED SEPARATE CONFINEMENT HETEROSTRUCTURE;

QUANTUM WELL LASERS;

EID: 0031206949     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.605559     Document Type: Article

References (20)

1. U. Korean, B. I. Miller, Y. K. Su, T. L. Koch, and J. E. Bowers, "Low internal loss separate confinement heterostructure InGaAs/InGaAsP quatum well laser," Appl. Phys. Lett., vol. 51, pp. 1744-1746, Nov. 1987.
2. A. Kasutawa, T. Namegaya, N. Iwai, N. Yamanaka, Y. Ikegami, and N. Tsukiji, "Extremely high power 1.48 μm GaInAsP/InP GRIN-SCH strained MQW lasers," IEEE Photon. Technol. Lett., vol. 6, pp. 4-6, Jan. 1994.
3. K. Tanaka, K. Wakao, T. Yamamoto, H. Nobuhara, and T. Fuji, "Dependence of the differential quantum efficiency on the confinement structure in InGaAs/InGaAsP strained-layer multiple quantum-well lasers," IEEE Photon. Technol. Lett., vol. 5, pp. 602-605, June 1993.
4. H. Asano, S. Takano, M. Kawaradani, M. Kitamura, and I. Mito, "1.48-μm high power InGaAs/InGaAsP MQW LDO's for Er-doped fiber amplifiers," IEEE Photon. Technol. Lett., vol. 3, pp. 415-417, May 1991.
5. J. Z. Wilcox, S. Ou, J. J. Yang, M. Jansen, and G. L. Peterson, "Dependence of external efficiency on laser length and reflectivities in multiple quantum well lasers," Appl. Phys. Lett., vol. 55 , pp. 825-827, Aug. 1989.
6. J. Diaz, I. Eliashevich, X. He, H. Yi, Li. Wang, E. Kolev, D. Garbuzov, and M. Razeghi, "High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics," Appl. Phys. Lett., vol. 65, pp. 1004-1005, Aug. 1994.
7. J. Diaz, I. Eliashevich, X. He, M. Stanton, M. Erdtmann, L. Wang, and M. Razeghi, "Theoretical investigation of minority Carrier leakage of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes," Appl. Phys. Lett., vol. 65, pp. 2260-2262, Oct. 1994.
8. d of high-power InGaAsP/GaAs (λ = 0.8 μ m) lasers," Appl. Phys. Lett., vol. 66, pp. 253-255, Jan. 1995.
9. J. R. Biard, W. N. Carr, and B. S. Reed, "Analysis of a GaAs laser," Trans. Metal. Soc. AIME, vol. 230, pp. 286-290, Mar. 1964.
10. W. Streifer, D. R. Scifres, and R. D. Burnham, "Analysis of diode laser properties," IEEE J. Quantum Electron., vol. QE-18, pp. 1918-1929, Nov. 1982.
11. P. W. McIlroy, A. Kurobe, and Y. Uematsu, "Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 1958-1963, Dec. 1985.
12. T.-A. Ma, Z.-M. Li, T. Makino, and M. S. Wartak, "Approximate optical gain formulas for 1.55-μm strained quaternary quantum-well lasers," IEEE J. Quantum Electron., vol. 31, pp. 29-34, Jan. 1995.
13. A. Hoffman, M. Tischel, R. Heitz, L. Podlowski, M. Rosenzweig, and M. Mohrle, "Gain and loss mechanisms in InGaAs/InGaAsP multi-quantum-well laser structures," Superlatt. Microstruct., vol. 12, pp. 561-564, 1992.
14. D. A. Ackerman, P. A. Morton, G. E. Shtengel, M. S. Hybertsen, R. F. Kazarinov, T. Tanbun-Ek, and R. A. Logan, "Analysis of To in 1.3 μm multi-quantum-well and bulk active lasers," Appl. Phys. Lett., vol. 66, pp. 2613-2615, May 1995.
15. M. Asada, A. Kameyama, and Y. Suematsu, "Gain and intervalence band absorption in quantum-well lasers," IEEE J. Quantum Electron., vol. QE-20, pp. 745-753, July 1984.
16. G. Fuchs, J. Horer, A. Hangleiter, V. Harle, and F. Scholz, "Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures," Appl. Phys. Lett., vol. 60, pp. 231-233, Jan. 1992.
17. T. Cho, H. Kim, Y. Kwon, and S. Hong, "Theoretical study on intervalence band absorption in InP-based quantum-well laser structures," Appl. Phys. Lett., vol. 68, pp. 2183-2185, Apr. 1996.
18. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers. 2nd ed. New York: Van Nostrand Reinhold, 1993.
19. L. M. Walpita, "Solutions for planar optical waveguide equations by selecting zero elements in a characteristic matrix," J. Opt. Soc. Amer. A, vol. 2, pp. 595-602, Apr. 1985.
20. P. R. Bevington and D. K. Robinson, Data Reduction and Error Analysis for the Physical Sciences, 2nd ed. New York: McGraw-Hill, 1992, p. 161.