InP-based reversed-mesa ridge-waveguide structure for high-performance long-wavelength laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 672-683

  Aoki, Masahiro ^a,b,c   Komori, Masaaki ^a,c,d,e   Tsuchiya, Tomonobu ^a,c,f   Sato, Hiroshi ^a,c,g   Nakahara, Kouji ^a   Uomi, Kazuhisa ^a  

^a HITACHI LTD   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d Hiroshima Institute of Technology   (Japan)

^e OSAKA UNIVERSITY   (Japan)

^f UNIVERSITY OF TSUKUBA   (Japan)

^g WASEDA UNIVERSITY   (Japan)

Author keywords

Integrated optoelectronics; Quantum well lasers; Semiconductor lasers

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC RESISTANCE; HEAT RESISTANCE; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; INTEGRATED OPTOELECTRONICS; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

RIDGE WAVEGUIDE (RWG) LASERS;

QUANTUM WELL LASERS;

EID: 0031108385     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605720     Document Type: Article

References (57)

1. I. Mito, M. Kitamura, K. Kobayashi, S. Murata, M. Seki, Y. Odagiri, H. Nishimoto, M. Yamaguchi, K. Kobayashi, "InGaAsP double-channel-planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement," J. Lightwave Technol., vol. LT-1, pp. 195-202, 1983.
2. H. Ishikawa, S. Yamakoshi, and S. Isozumi, "Distributed feedback laser emitting at 1.3 μm for high-bit-rate systems," Fujitsu Sci. Tech. J., vol. 22, pp. 451-460, 1986.
3. J. L. Zilko, L. J. P. Ketelsen, Y. Twu, D. P. Wilt, S. G. Napholtz, J. P. Blaha, K. E. Strege, V. G. Riggs, D. L. Vanharen, S. Y. Leung, P. M. Nitzsche, J. A. Long, G. Przyblek, J. Lopata, M. W. Focht, and L. A. Koszi, "Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback lasers," IEEE J. Quantum Electron., vol. 25, pp. 2091-2095, Oct. 1989.
4. S. Kakimoto, Y. Nakajima, A. Takemoto, N. Yoshida, H. Namizaki, and W. Susaki, "High output power and high temperature operation of 1.5 μm DFB-PPIBH laser diodes," IEEE J. Quantum Electron., vol. 25, pp. 1288-1293, June 1989.
5. A. Kasukawa et al., "1.3 μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapor deposition (MOCVD)," Electron. Lett., vol. 25, no. 2, pp. 104, 1989.
6. M. Krakowski, D. Rondi, A. Talneau, Y. Combemale, G. Chevalier, F. Deborgies, P. Maillot, P. Richin, R. Blondeau, L. d'Auria, and B. de Gremoux, "Ultra-low-threshold, high-bandwidth, very-low-noise operation of 1.52-μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD," IEEE J. Quantum Electron., vol. 25, pp. 1346-1352, June 1989.
7. P. J. A. Thijs, J. J. M. Binsma, E. W. A. Young, and W. M. E. van Gils, "High power and high temperature operation of 1.5 μm wavelength strained-layer InGaAs/InGaAsP SIPBH lasers," in Tech. Dig. IPRM '91, Cardiff, U.K., TuA 2, 1991.
8. Y. Ohkura, T. Kimura, T. Nishimura, K. Mizuguchi, and T. Kimura, "Low threshold FS-BH laser on p-InP substrate grown by all-MOCVD," Electron. Lett., vol. 28, no. 19, pp. 1844-1845, 1992.
9. S. Yamashita, A. Oka, T. Kawano, T. Tsuchiya, K. Saitoh, K. Uomi, and Y. Ono, "Low-threshold (3.2-mA per element) 1.3-μm InGaAsP MQW laser array on a p-type substrate," IEEE Photon. Technol. Lett., vol. 4, pp. 954-957, Sept. 1992.
10. K. Uomi, T. Tsuchiya, M. Komori, A. Oka, T. Kawano, and A. Ohishi, "Ultra-low threshold 1.3-μm InGaAsP-InP compressively-strained multiquantum well monolithic laser array for parallel high-density optical interconnects," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 203-210, June 1995.
11. T. Terakado, K. Tsuruoka, T. Ishida, T. Nakamura, K. Fukushima, S. Ae, A. Uda, T. Torikai, and T. Uji, "Extremely low thresholds (0.4 mA @ 20 °C, 3.0 mA @ 85 °C) 1.3-μm strained MQW lasers with novel p-substrate buried-heterostructure (RIBPBH) grown by MOVPE using TBA and TBP," in Proc. 14th IEEE Semicond. Laser Conf., Maui, Hawaii, Paper PD 9, Sept. 1994, pp. 21-22.
12. T. Higashi, T. Takeuchi, K. Morito, M. Matsuda, and H. Soda, "High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion etching technique," IEEE Photon. Technol. Lett., vol. 7, pp. 828-829, Aug. 1995.
13. Y. Sakata, P. Delansay, Y. Inomoto, M. Yamaguchi, T. Murakami, and H. Hasumi, "Improved performance of MQW BH-LD's with current-blocking structure fabricated by selective MOVPE and novel self-alignment process," in Tech. Dig. IOOC '95, Wanchai, Hong Kong, 1995, FB 2-3.
14. 4 reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy," in Tech. Dig. IPRM '96, Schwbëisch Gmünd, Germany, 1996, TuB 2-3.
15. K. Y. Liou, W. T. Tsang, F. S. Choa, E. C. Burrows, G. Raybon, and C. A. Burrus, "Low-threshold and high-temperature operation of 1.55 μm self-aligned ridge-waveguide multiple-quantum-well lasers grown by chemical-beam epitaxy," Appl. Phys. Lett., vol. 59, no. 26, pp. 3381-3383, 1991.
16. N. Matsumoto, T. Fukushima, H. Nakayama, Y. Ikegami, T. Namegaya, A. Kasukawa, and M. Shibata, "High-reliability and high-temperature operation of GaInAsP/InP multiple-quantum-well ridge-waveguide lasers emitting at 1.3 μm with an excellent process-uniformity," in Tech. Dig. ECOC '93, Montreux, Switzerland, 1993, ThP11.5.
17. B. Stegmuller, E. Vuhoff, J. Rieger, and H. Hedrich, "High-temperature (130 °C) CW operation of 1.53-μm InGaAsP ridge-waveguide lasers using strained quaternary quantum wells," Electron. Lett., vol. 29, no. 19, pp. 1691-1693, 1993.
18. C. E. Zah, R. Bhat, B. Pathak, F. Favire, M. C. Wang, W. Lin, N. C. Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D. Flanders, and J. J. Hsieh, "High-performance uncooled 1.3-μm AlGaInAs/InP strained-layer quantum-well lasers for fiber-in-the-loop applications," in Tech. Dig. OFC '94, San Jose, CA, 1994, ThG1.
19. A. P. Wright, A. T. R. Briggs, A. D. Smith, R. S. Baulcomb, K. J. Warbrick, "22 GHz-bandwidth 1.5 μm compressively strained InGaAsP MQW ridge-waveguide DFB lasers," Electron. Lett., vol. 29, no. 21, pp. 1848-1849, 1993.
20. M, Aoki, T. Tsuchiya, K. Nakahara, M. Komori, and K. Uomi, "Highpower and wide-temperature-range operations of InGaAsP/InP strained MQW lasers with reverse-mesa ridge-waveguide structure," IEEE Photon. Technol. Lett., vol. 7, pp. 13-15, Jan. 1995.
21. M. Aoki, M. Komori, T. Tsuchiya, H. Sato, K. Uomi, and T. Ohtoshi, "High-performance strained-layer InGaAsP/InP MQW lasers with reversed-mesa ridge-waveguide structure," Electron. Lett., vol. 31, pp. 973-974, 1995.
22. M. C. Wang, W. Lin, T. T. Shi, and Y. K. Tu, "Ultrahigh temperature and ultrahigh speed operation of 1.3 μm strain-compensated AlGaInAs/InP uncooled laser diodes," Electron. Lett., vol. 31, no. 18, pp. 1584-1585, 1995.
23. E. Yablonovitch and E. Kane, "Band structure engineering of semiconductor lasers for optical communications," J. Lightwave Technol., vol. 6, pp. 1292-1299, AUG. 1988.
24. A. R. Adams, "Band-structure engineering for low-threshold highefficiency semiconductor lasers," Electron. Lett., vol. 22, pp. 249-250, 1986.
25. H. Temkin, N. K. Dutta, T. Tanbun-Ek, R. A. Logan, and A. M. Sergent, "InGaAs/InP quantum well lasers with sub-mA threshold current," Appl. Phys. Lett., vol. 57, pp. 1610-1612, 1990.
26. P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, and T. V. Dongen, "High-performance 1.5-μm InGaAs-InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron., vol. 27, pp. 1426-1439, June 1991.
27. C. E. Zah, R. Bhat, F. J. Favire, S. G. Menocal, N. C. Andreakis, K. W. Cheung, D. D. Hwang, M. A. Koza, and T. P. Lee, "Low-threshold 1.5-μm compressive-strained multiple-and single-quantum-well lasers," IEEE J. Quantum Electron., vol. 27, pp. 1440-1450, June 1991.
28. T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikuta, "High temperature operation of 1.3 μm GaInAsP/InP GRINSCH strained-layer quantum well lasers," Electron. Lett., vol. 29, pp. 392-393, 1992.
29. C. E. Zah, F. J. Favire, R. Bhat, S. G. Menocal, N. C. Andreakis, D. M. Hwang, M. Koza, and T. P. Lee, "Submilliampere-threshold 1.5-μm strained-layer multiple quantum well lasers," IEEE Photon. Technol. Lett., vol. 2, pp. 852-853, Dec. 1990.
30. J. S. Osinski, P. Grodzinski, Y. Zou, P. D. Dapkus, Z. Karim, and A. R. Tanguay, "Low threshold current 1.5-μm buried heterostructure lasers using strained quaternary quantum wells," IEEE Photon, Technol. Lett., vol. 4, pp. 1313-1315, 1992.
31. P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, and T. V. Dongen, "Submilliamp threshold current (0.62 mA at 0 °C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasers," Electron. Lett., vol. 9, pp. 829-830, 1992.
32. T. Nishimura, E. Ishimura, Y. Nakajima, H. Tada, T. Kimura, Y. Ohkura, K. Goto, E. Omura, and M. Aiga, "All-MOCVD grown BH laser with low threshold current on p-InP substrates," Proc. SPIE-Int. Soc. Opt. Eng., vol. 1849, pp. 272-279, 1993.
33. A. Oishi, A. Oka, T. Kawano, Y. Ono, K. Uomi, T. Tsuchiya, M. Komori, and T. Takai, "Low threshold (1.8 mA) and high-efficiency (0.39 W/A) 1.3 μm strained quantum well 10-element laser arrays for high-throughput optical interconnections," in Tech. Dig., 19th European Conf. Opt. Common. (ECOC'93), Montreux, Switzerland, vol. 3, Sept. 1993, pp. 21-24.
34. T. Tsuchiya, M. Komori, K. Uomi, A. Oka, T. Kawano, and A. Oishi, "Investigation of effect of strain on low-threshold 1.3 μm InGaAsP strained-layer quantum well lasers," Electron. Lett., vol. 30, pp. 788-789, 1994.
35. K. Uomi, "Modulation doped multiquantum well (MD-MQW) lasers (I. Theory)," Jpn. J. Appl. Phys., vol. 29, pp. 81-87, 1990.
36. K. Uomi, T. Mishima, and N. Chinone, "Modulation doped multiquantum well (MD-MQW) lasers (II. Experiment)," Jpn. J. Appl. Phys., vol. 29, pp. 88-94, 1990.
37. A. Niwa, T. Ohtoshi, K. Uomi, and K. Nakahara, "Doping-type dependence of turn-on delay time in 1.3-μm InGaAsP/InP modulation-doped strained quantum well lasers," IEEE Photon. Technol. Lett., vol. 8, pp. 328-330, Mar. 1996.
38. T. Yamamoto, T. Watanabe, S. Ide, K. Tanaka, H. Nobuhara, and K. Wakao, "Low threshold current density 1.3-μm strained-layer quantum well lasers using n-type modulation doping," IEEE Photon. Technol. Lett., vol. 6, pp. 1165-1166, Oct. 1994.
39. K. Nakahara, K. Uomi, T. Haga, T. Taniwatari, and A. Ohishi, "Reduced turn-on delay time in 1.3-μm InGaAsP/InP n-type modulation-doped strained multiquantum well lasers with a buried heterostructure," IEEE Photon. Technol. Lett., vol. 8, pp. 1297-1298, Oct. 1996.
40. M. Hirao, A. Doi, S. Tsuji, M. Nakamura, and K. Aiki, "Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers," J. Appl. Phys., vol. 51, pp. 4539-4540, 1980.
41. H. Nagai, Y. Noguchi, K. Takahashi, Y. Toyoshima, and G. Iwane, "InP/InGaAsP buried heterostructure lasers of 1.5 μm region," Jpn J. Appl. Phys., vol. 19, pp. L218-L220, 1990.
42. S. Arai, M. Asada, Y. Suematsu, Y. Itaya, T. Tanbun-ek, and K. Kishino, "New 1.6 μm wavelength GaInAsP/InP buried heterostructure lasers," Electron. Lett., vol. 16, pp. 349-350, 1980.
43. S. Adachi, Y. Noguchi, H. Kawaguchi, "Chemical etching of In-GaAsP/lnP DH wafer," J. Electrochem. Soc., vol. 129, no 5, pp. 1053-1062, 1982.
44. N. Uchida, Y. Hibino, Y. Suzuki, T. Kurosaki, N. Ishihara, M. Nakamura, T. Hashimoto, Y. Akahori, Y. Inoue, K. Moriwaki, Y. Yamada, K. Kato, Y. Tohmori, M. Wada, and T. Sugie, "Passively aligned hybrid WDM module integrated with a spot-size converted laser diode and waveguide photodiode on a PLC platform for fiber-to-the-home," in Tech. Dig. OFC '96, San Jose, CA, 1996.
45. J. V. Collins, I. F. Lealman, P. J. Fiddyment, C. A. Jones, R. G. Waller, L. J. Rivers, K. Cooper, S. D. Perrin, M. W. Nield, and M. J. Harlow, "Passive alignment of a taperer laser with more than 50% coupling efficiency," Electron. Lett., vol. 27, pp. 730-731, 1995.
46. H. Okano, M. Okawa, H. Uetsuka, T. Teraoka, S. Aoki, and S. Tsuji, "Passive aligned hybrid integrated optical module using planar lightwave circuit platform," in Tech. Dig., 9th Annu. Meet., LEOS'96, Boston MA 1996, 73-74.
47. J. Yoshida et al., "Strategy for developing low-cost optical modules for the ONU of optical subscriber systems," in IEEE Workshop Access Networks, Tech. Dig., Tokyo, Japan, 1995, pp. 6.1.1-6.1.8.
48. S. Tsuji, R. Takahashi, T. Kato, F. Uchida, S. Kikuchi, T. Hirataka, M. Shishikura, H. Okano, T. Shiota, and S. Aoki, "Passive coupling of a single mode optical waveguide and a laser diode/waveguide photodiode for a WDM transceiver module," IEICE Trans. Commun., vol., E79-B, no. 7, pp. 943-945, 1996.
49. S. Y. Hu, D. B. Young, A. C. Gossard, and L. A. Coldren, "The effect of lateral leakage current on the experimental gain/current-density curve in quantum-well ridge-waveguide lasers," IEEE J. Quantum Electron., vol. 30, pp. 2245-2250, Oct. 1994.
50. J. D. Evance, G. J. Letal, G. P. Li, and J. G. Simmons, "The contribution of lateral current spreading to the temperature sensitivity of strained-layer multiple-quantum-well long wavelength ridge waveguide lasers," in Tech. Dig., 7th Annual Meeting, LOES'94, San Francisco, CA, 1995, pp. 278-279.
51. M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, "InGaAsTInGaAsP MQW- electroabsorption modulator integrated with a DFB laser fabricated by bandgap energy control selective area MOCVD," J. Quantum Electron., vol. 27, pp. 2281-2295, 1993.
52. T. Sasaki, M. Kitamura, and I. Mito, "Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/lnGaAsP multiple-quantum well structures," J. Cryst. Growth, vol. 132, pp. 435-443, 1993.
53. Y. Kato, T. Kunii, Y. Matsui, H. Wada, T. Kamijoh, and Y. Kawai, "DBR laser array for WDM system," Electron. Lett., vol. 29, no. 25, pp. 2195-2196, 1993.
54. M. Aoki, T. Taniwatari, M. Suzuki, and T. Tsutsui, "Detuning adjustable multi-wavelength MQW-DFB laser array grown by effective index/quantum energy control selective area MOVPE," IEEE Photon. Technol. Lett., vol. 8, pp. 789-791, July 1994.
55. T. Sasaki, M. Yamaguchi, and M. Kitamura, "10 wavelength MQW-DBR lasers fabricated by selective MOVPE growth," Electron. Lett., vol. 30, no. 10, pp. 785-786, 1994.
56. M. Aoki, M. Komori, M. Suzuki, H. Sato, M. Takahashi, T. Ohtoshi, K. Uomi, and S. Tsuji, "Wide-temperature-range operation of 1.3-μm beam-expander integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask," IEEE Photon. Technol. Lett., vol. 8, pp. 479-481, Apr. 1996.
57. H. Soda, "Beam propagation analysis of ridge waveguide structure MQW tapered thickness and width spot-size transformers," presented at the Conf. Laser and Electro-Optics, CLEO/Pacific Rim '95, Chiba, Japan, 1995.