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Volumn 68, Issue 4, 1999, Pages 411-416

On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DENSITY (SPECIFIC GRAVITY); ELECTRON IRRADIATION; LOW TEMPERATURE OPERATIONS; NITROGEN; POSITRONS;

EID: 0033116775     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050915     Document Type: Article
Times cited : (30)

References (35)
  • 23
    • 0001599099 scopus 로고
    • ed. by S.T. Pantelides Gordon and Breach, New York
    • G.D. Watkins: In Deep Centers in Semiconductors, ed. by S.T. Pantelides (Gordon and Breach, New York 1986) p. 147
    • (1986) Deep Centers in Semiconductors , pp. 147
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.