Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 765-770

  Gonzalez Borrero P P ^a   Marega Jr , E ^a   Lubyshev, D I ^a   Petitprez, E ^a   Basmaji, P ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

High index; MBE; Quantum dots; Self assembled

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

SELF ASSEMBLED GROWTH; THERMAL QUENCHING ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 4244054157     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01182-7     Document Type: Article

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