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Volumn 123-124, Issue , 1998, Pages 381-384

Optical properties of InAlAs quantum dots in an AlGaAs matrix

(13) Tsatsul'nikov, A F a Egorov, A Yu a Kop'ev, P S a Kovsh, A R a Ledentsov, N N b Maximov, M V a Suvorova, A A a Ustinov, V M a Volovik, B V a Zhukov, A E a Grundmann, M b Bimberg, D b Alferov, Zh I a

a IOFFE INSTITUTE (Russian Federation)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

Molecular beam epitaxy; Nanostructures; Photoluminescence; Quantum dots

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM ARSENIDE; INDIUM ALUMINUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031685716 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00493-5 Document Type: Article

Times cited : (8)

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