High power InAsSb/InAsSbP laser diodes emitting at 3 approximately 5 μm range

Materials Research Society Symposium - Proceedings

Volumn 450, Issue , 1997, Pages 13-22

  Razeghi, M ^a   Diaz, J ^a   Yi, H J ^a   Wu, D ^a   Lane, B ^a   Rybaltowski, A ^a   Xiao, Y ^a   Jeon, H ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; INFRARED DEVICES; LASER BEAMS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE HETEROSTRUCTURE LASERS; MIDINFRARED LASER DIODES;

QUANTUM WELL LASERS;

EID: 0030682339     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)