Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

Applied Physics Letters

Volumn 70, Issue 11, 1997, Pages 1447-1449

  Lane, B ^a   Wu, D ^a   Yi, H J ^a   Diaz, J ^a   Rybaltowski, A ^a   Kim, S ^a   Erdtmann, M ^a   Jeon, H ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005770422     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118559     Document Type: Article

References (14)

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2. D. Wu, F. Kass, J. Diaz, B. Lane, A Rybaltowski, H. J. Yi, and M. Razeghi, IEEE Photon, Technol. Lett, (accepted for publication); J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kass, and M. Razeghi, Appl. Phys. Lett, (accepted for publication).
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14. In this work, parameters were interpolated from those of the constituent binary compounds.