Free exciton recombination in tensile strained GaN grown on GaAs

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1271-1274

  Goldhahn, R ^a   Shokhovets, S ^b   Romanus, H ^a   Cheng, T S ^c   Foxon, C T ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Free Exciton; GaAs Substrate; Interface Layer; Photoluminescence; Tensile Strain

Indexed keywords

CRYSTAL LATTICES; ELECTRON TRANSITIONS; EXCITONS; INTERFACES (MATERIALS); RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; THERMAL EFFECTS;

GALLIUM NITRIDE; LATTICE MISMATCH;

NITRIDES;

EID: 0031648431     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1271     Document Type: Article

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